Giant intrinsic carrier mobilities in graphene and its bilayer.
نویسندگان
چکیده
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
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عنوان ژورنال:
- Physical review letters
دوره 100 1 شماره
صفحات -
تاریخ انتشار 2008